Official Website:https://www.vbsemi.com/
#Chip
The evaluation experiment of our products and competitive products has the following parameters:
- Single channel power (Single P)
- High voltage withstand voltage (VDS (V)): -30V
- Gate source voltage (VGS (±V)): 20V
- Threshold voltage (Vth (V)): -3V
- Drain-source resistance at 4.5V (VGS = 4.5V (mΩ)): 8mΩ
- Drain-source resistance at 10V (VGS = 10V (mΩ)): 5mΩ
- Drain current (ID (A)): -18A
- Technology (Technology): Trench
- Package (Package): SOP8
#Chip
The evaluation experiment of our products and competitive products has the following parameters:
- Single channel power (Single P)
- High voltage withstand voltage (VDS (V)): -30V
- Gate source voltage (VGS (±V)): 20V
- Threshold voltage (Vth (V)): -3V
- Drain-source resistance at 4.5V (VGS = 4.5V (mΩ)): 8mΩ
- Drain-source resistance at 10V (VGS = 10V (mΩ)): 5mΩ
- Drain current (ID (A)): -18A
- Technology (Technology): Trench
- Package (Package): SOP8
Category
🤖
Tech