Official Website：https://www.vbsemi.com/
#Chip
"**VBsemi RQJ0304DQDQATL-E-VB**
- **Parameter Description:**
- Package Type: SOT23
- Channel Type: P—Channel
- Maximum Withstand Voltage: -30V
- Maximum Current: -5.6A
- Turn-on Voltage (Gate-source Voltage): Vth=-1V
- Turn-on Resistance: RDS(ON)=47mΩ @ VGS=10V, VGS=20V
- **Application Introduction:**
- **SOT23 Package:** Small, suitable for electronic applications in compact spaces.
- **P—Channel Design:** Suitable for circuits requiring P-type field effect transistors.
- **Low Voltage, High Current:** Suitable for low voltage power supplies and power management applications requiring larger currents.
- **Low on-resistance:** Provides lower on-resistance and is suitable for circuits requiring high efficiency.
- **Field and module applications:**
- **Power management module:** Due to its P-Channel design and large current capability, it can be used in low-voltage power management modules.
- **Power amplifier:** Suitable for power amplifier circuits that require P-type field effect transistors.
- **DC-DC converter:** Used to build high-efficiency, low-voltage DC-DC converters.
- **Current control applications:** Due to its low on-resistance, it can be used in current control circuits.
This VBsemi RQJ0304DQDQATL-E-VB field effect transistor is suitable for a variety of power management and power control applications, especially in scenarios with high requirements for low voltage and high current."
#Chip
"**VBsemi RQJ0304DQDQATL-E-VB**
- **Parameter Description:**
- Package Type: SOT23
- Channel Type: P—Channel
- Maximum Withstand Voltage: -30V
- Maximum Current: -5.6A
- Turn-on Voltage (Gate-source Voltage): Vth=-1V
- Turn-on Resistance: RDS(ON)=47mΩ @ VGS=10V, VGS=20V
- **Application Introduction:**
- **SOT23 Package:** Small, suitable for electronic applications in compact spaces.
- **P—Channel Design:** Suitable for circuits requiring P-type field effect transistors.
- **Low Voltage, High Current:** Suitable for low voltage power supplies and power management applications requiring larger currents.
- **Low on-resistance:** Provides lower on-resistance and is suitable for circuits requiring high efficiency.
- **Field and module applications:**
- **Power management module:** Due to its P-Channel design and large current capability, it can be used in low-voltage power management modules.
- **Power amplifier:** Suitable for power amplifier circuits that require P-type field effect transistors.
- **DC-DC converter:** Used to build high-efficiency, low-voltage DC-DC converters.
- **Current control applications:** Due to its low on-resistance, it can be used in current control circuits.
This VBsemi RQJ0304DQDQATL-E-VB field effect transistor is suitable for a variety of power management and power control applications, especially in scenarios with high requirements for low voltage and high current."
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Tech