"Model: AP2315GEN-VB
Brand: VBsemi
Parameters:
- Package: SOT23
- Channel type: P-Channel
- Rated channel voltage (VDS): -30V
- Rated channel current (ID): -5.6A
- Static drain-source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Gate-source threshold voltage (Vth): -1V
Package: SOT23
**Detailed parameter description:**
1. **Channel type:** P-Channel Channel type indicates that this is a P-Channel MOSFET, suitable for circuit design that requires P-Channel characteristics.
2. **Rated channel voltage:** -30V indicates that the rated operating voltage of this MOSFET is -30V, which is suitable for the corresponding power supply voltage range.
3. **Rated channel current:** -5.6A indicates that the maximum rated operating current of this MOSFET is -5.6A, which is suitable for circuits with higher load current requirements.
4. **Static drain-source resistance:** 47mΩ @ VGS=10V, VGS=20V indicates the static drain-source resistance at different gate-source voltages. This is important for evaluating the conduction loss in the on state.
5. **Gate-source threshold voltage:** -1V indicates that under ideal conditions, when the gate-source voltage reaches -1V, the MOSFET starts to turn on.
**Application Introduction: **
This MOSFET is usually used in circuits that require a P-Channel channel, which may include power switches, power management, amplifiers, etc. Due to its large load current characteristics, it can be used in power supplies and circuits that need to carry large currents.
**Fields and module applications: **
1. **Power management module: ** Due to its large load current and moderate operating voltage range, it is suitable for power switching circuits in power management modules.
2. **Power amplifier module: ** Used in modules such as audio power amplifiers to adjust power by controlling the conduction state of the MOSFET.
3. **Power inverter: ** In the power inverter, it is used to control the switching circuit to achieve energy conversion from DC to AC.
Please note that the specific application and module design need to be further confirmed based on the specific circuit requirements and specifications."
Brand: VBsemi
Parameters:
- Package: SOT23
- Channel type: P-Channel
- Rated channel voltage (VDS): -30V
- Rated channel current (ID): -5.6A
- Static drain-source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Gate-source threshold voltage (Vth): -1V
Package: SOT23
**Detailed parameter description:**
1. **Channel type:** P-Channel Channel type indicates that this is a P-Channel MOSFET, suitable for circuit design that requires P-Channel characteristics.
2. **Rated channel voltage:** -30V indicates that the rated operating voltage of this MOSFET is -30V, which is suitable for the corresponding power supply voltage range.
3. **Rated channel current:** -5.6A indicates that the maximum rated operating current of this MOSFET is -5.6A, which is suitable for circuits with higher load current requirements.
4. **Static drain-source resistance:** 47mΩ @ VGS=10V, VGS=20V indicates the static drain-source resistance at different gate-source voltages. This is important for evaluating the conduction loss in the on state.
5. **Gate-source threshold voltage:** -1V indicates that under ideal conditions, when the gate-source voltage reaches -1V, the MOSFET starts to turn on.
**Application Introduction: **
This MOSFET is usually used in circuits that require a P-Channel channel, which may include power switches, power management, amplifiers, etc. Due to its large load current characteristics, it can be used in power supplies and circuits that need to carry large currents.
**Fields and module applications: **
1. **Power management module: ** Due to its large load current and moderate operating voltage range, it is suitable for power switching circuits in power management modules.
2. **Power amplifier module: ** Used in modules such as audio power amplifiers to adjust power by controlling the conduction state of the MOSFET.
3. **Power inverter: ** In the power inverter, it is used to control the switching circuit to achieve energy conversion from DC to AC.
Please note that the specific application and module design need to be further confirmed based on the specific circuit requirements and specifications."
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Tech