• yesterday
"**HM3415B-VB Detailed parameter description: **
- **Brand: **VBsemi
- **Model: **HM3415B-VB
- **Silkscreen: **VB2355
- **Package: **SOT23

**Electrical parameters: **
- **Channel type: **P-Channel
- **Maximum leakage current: **-5.6A
- **Drain-source voltage: **-30V
- **On-resistance (RDS(ON)): **47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth): **-1V

**Packaging information: **
- **Package type: **SOT23

**Application introduction: **
HM3415B-VB is a P-Channel power field effect transistor suitable for various electronic applications. Its main features include low leakage current, low on-resistance and high drain-source voltage, making it widely used in different fields.

**Main application areas:**
1. **Power module:** Due to its low leakage current and low on-resistance, HM3415B-VB is suitable for power switching circuits in power modules.

2. **Power management:** In the field of power management, it can be used to design stable and reliable power supply circuits.

3. **Communication equipment:** Due to its high drain-source voltage, it can be used as a power amplifier or switching element in communication equipment.

4. **Industrial control:** In industrial control systems, it can be used for applications such as driving motors, switching power supplies, etc.

**Note:** Before use, please read the relevant data sheets and specifications carefully to ensure the suitability of the product in a specific application."

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